Title :
Research of sector split-drain MAGFET (structure and model) based on standard 0.6um N-well CMOS technology
Author :
Dazhong, Zhu ; Yunruo, Yao
Author_Institution :
Inst. of Microelectron. Technol. Syst. Design, Zhejiang Univ., Hangzhou, China
Abstract :
In this paper, a new structure of sector split-drain MAGFET, based on CSMC standard 0.6 μm N-well CMOS technology, is suggested and its model is also developed. The relationship of its relative sensitivity with device geometry parameters is obtained by computer simulation. A maximum sensor sensitivity of 3.77%/T is obtained in experimental results with an offset value lower than 0.27%. Improvement of sensitivity is attributed to the sector structure.
Keywords :
CMOS integrated circuits; field effect transistors; magnetic sensors; semiconductor device models; 0.6 micron; N-well CMOS technology; magnetic sensor CMOS IC; maximum sensor sensitivity; relative sensitivity/device geometry relationship; sector split-drain MAGFET; split-drain magnetic field effect transistor; CMOS integrated circuits; CMOS technology; FET integrated circuits; Geometry; Lorentz covariance; Magnetic field measurement; Magnetic fields; Magnetic sensors; Mathematical model; Semiconductor device modeling;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435162
