A Low Noise Amplifier for Ultra-wideband Systems in 0.13μm CMOS Technology

Author

Sheshdeh, Zhila Amini ; Choobkar, Sabrieh ; Nabavi, Abdolreza

Author_Institution

Fac. of Eng., Univ. of Tarbiat Modares, Tehran

Volume

2

fYear

2006

fDate

25-28 June 2006

Firstpage

788

Lastpage

791

Abstract

This paper presents a low noise amplifier (LNA) in 0.13 mum CMOS for ultra-wideband (UWB) receiver. The LNA has a peak gain of 27 dB and a 3.0-10.7 GHz -3 dB bandwidth. Its input impedance matching is better than -5 dB and output matching is less than -15 dB. Its lowest noise figure (NF) is 0.4 dB and the average NF is 3 dB. The LNA achieves NFmin performance over the entire bandwidth by using a power-constrained simultaneous noise and input matching concept. It´s power consumption is only 4.8 mW with a 1.2 V power supply, for amplifier core and 1.8 mW in output buffer. A comparison with recently published UWB LNA shows that this design exhibits the best overall performance in terms of gain, NF and power consumption

Keywords

CMOS integrated circuits; impedance matching; low noise amplifiers; microwave amplifiers; ultra wideband communication; 0.13 micron; 0.13 mum CMOS technology; 1.2 V; 3.0 to 10.7 GHz; 4.8 mW; LNA; UWB; impedance matching; low noise amplifier; ultra-wideband receiver; Bandwidth; CMOS technology; Energy consumption; Gain; Impedance matching; Low-noise amplifiers; Noise figure; Noise measurement; Power supplies; Ultra wideband technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, Circuits and Systems Proceedings, 2006 International Conference on

Conference_Location

Guilin

Print_ISBN

0-7803-9584-0

Electronic_ISBN

0-7803-9585-9

Type

conf

DOI

10.1109/ICCCAS.2006.284771

Filename

4064012