High CW power diode lasers with unstrained and compressively strained InGaAsP-QWs in AlGaAs waveguides emitting at 800 nm

Author

Erbert, G. ; Bugge, F. ; Oster, A. ; Sebastian, J. ; Staske, R. ; Vogel, K. ; Wenzel, H. ; Weyers, M. ; Traenkle, G.

Author_Institution

Ferdinand-Braun-Inst., Berlin, Germany

Volume

2

fYear

1997

fDate

10-13 Nov 1997

Firstpage

199

Abstract

Summary form only given. In summary we have developed a diode laser with a low threshold current density and a high efficiency using a compressively strained Al-free InGaAsP QW embedded in AlGaAs waveguides. Using the well established MOVPE for AlGaAs structures such diode lasers show comparable performance to best structures with Al-free waveguide and cladding layers grown by MBE

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; waveguide lasers; 800 nm; Al-free InGaAsP QW; AlGaAs; AlGaAs waveguides; InGaAsP; MBE; MOVPE; compressively strained InGaAsP-QWs; high CW power diode lasers; high efficiency; low threshold current density; unstrained InGaAsP-QWs; Artificial intelligence; Diode lasers; Epitaxial growth; Epitaxial layers; Lab-on-a-chip; Power generation; Power lasers; Thermal resistance; Threshold current; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.645356

Filename

645356