A sub-0.6V,34.8nW,4.6ppm/°C CMOS voltage reference using subthreshold and body effect techniques

Author

Qu, Zihua ; Zhang, Meng ; Wu, Jianhui ; Li, Yongjia

Author_Institution

Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China

fYear

2009

fDate

19-21 Jan. 2009

Firstpage

275

Lastpage

278

Abstract

An ultra low-voltage and low-power CMOS voltage reference was proposed in this paper. Subthreshold and body effect techniques are used to achieve temperature compensation. No resistor and BJT are used in this structure. The proposed circuit has been simulated with Charted 0.18-Â¿m standard CMOS process. The simulated results show that the voltage reference can operate with sub-0.6V supply and total supply current is 60nA at 0.58V supply at room temperature. The temperature coefficient of the output voltage is 4.6ppm/Â°C, in a range from -40Â°C to 85Â°C.

Keywords

CMOS integrated circuits; compensation; low-power electronics; body effect technique; current 60 nA; low-power CMOS voltage reference; room temperature; size 0.18 mum; standard CMOS process; subthreshold technique; temperature coefficient; temperature compensation; ultra low-voltage CMOS voltage reference; voltage 0.58 V; Application specific integrated circuits; CMOS process; CMOS technology; Circuit simulation; Low voltage; MOSFETs; P-n junctions; Resistors; Temperature distribution; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics & Electronics, 2009. PrimeAsia 2009. Asia Pacific Conference on Postgraduate Research in

Conference_Location

Shanghai

Print_ISBN

978-1-4244-4668-1

Electronic_ISBN

978-1-4244-4669-8

Type

conf

DOI

10.1109/PRIMEASIA.2009.5397394

Filename

5397394