Title :
A sub-0.6V,34.8nW,4.6ppm/°C CMOS voltage reference using subthreshold and body effect techniques
Author :
Qu, Zihua ; Zhang, Meng ; Wu, Jianhui ; Li, Yongjia
Author_Institution :
Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China
Abstract :
An ultra low-voltage and low-power CMOS voltage reference was proposed in this paper. Subthreshold and body effect techniques are used to achieve temperature compensation. No resistor and BJT are used in this structure. The proposed circuit has been simulated with Charted 0.18-¿m standard CMOS process. The simulated results show that the voltage reference can operate with sub-0.6V supply and total supply current is 60nA at 0.58V supply at room temperature. The temperature coefficient of the output voltage is 4.6ppm/°C, in a range from -40°C to 85°C.
Keywords :
CMOS integrated circuits; compensation; low-power electronics; body effect technique; current 60 nA; low-power CMOS voltage reference; room temperature; size 0.18 mum; standard CMOS process; subthreshold technique; temperature coefficient; temperature compensation; ultra low-voltage CMOS voltage reference; voltage 0.58 V; Application specific integrated circuits; CMOS process; CMOS technology; Circuit simulation; Low voltage; MOSFETs; P-n junctions; Resistors; Temperature distribution; Threshold voltage;
Conference_Titel :
Microelectronics & Electronics, 2009. PrimeAsia 2009. Asia Pacific Conference on Postgraduate Research in
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-4668-1
Electronic_ISBN :
978-1-4244-4669-8
DOI :
10.1109/PRIMEASIA.2009.5397394
