Title :
980 nm laser diodes using strained-layer GaInAsP quantum-wells
Author :
Arakawa, S. ; Ishikawa, T. ; Iwai, N. ; Ohkubo, M. ; Kasukawa, A.
Author_Institution :
R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan
Abstract :
In conclusion, 980 nm lasers using strained GaInAsP QW lasers have been fabricated by MOCVD for the first time. Low threshold and high power operation have been obtained
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser transitions; optical fabrication; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; 980 nm; GaInAsP; IR laser transitions; MOCVD; high power operation; laser diodes; low threshold; strained GaInAsP QW lasers; strained-layer GaInAsP quantum-wells; Capacitive sensors; Diode lasers; Laser excitation; Optical waveguides; Quantum well lasers; Research and development; Temperature measurement; Threshold current; Waveguide lasers; X-ray lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.645359
