DocumentCode
3266515
Title
980 nm laser diodes using strained-layer GaInAsP quantum-wells
Author
Arakawa, S. ; Ishikawa, T. ; Iwai, N. ; Ohkubo, M. ; Kasukawa, A.
Author_Institution
R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan
Volume
2
fYear
1997
fDate
10-13 Nov 1997
Firstpage
203
Abstract
In conclusion, 980 nm lasers using strained GaInAsP QW lasers have been fabricated by MOCVD for the first time. Low threshold and high power operation have been obtained
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser transitions; optical fabrication; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; 980 nm; GaInAsP; IR laser transitions; MOCVD; high power operation; laser diodes; low threshold; strained GaInAsP QW lasers; strained-layer GaInAsP quantum-wells; Capacitive sensors; Diode lasers; Laser excitation; Optical waveguides; Quantum well lasers; Research and development; Temperature measurement; Threshold current; Waveguide lasers; X-ray lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location
San Francisco, CA
ISSN
1092-8081
Print_ISBN
0-7803-3895-2
Type
conf
DOI
10.1109/LEOS.1997.645359
Filename
645359
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