Mode-locking of a semiconductor laser with a multiple-mode interference waveguide

Author

Lay, Choong-Wen ; Huang, Ding-Wei ; Lee, Chun-Hao ; Yang, C.C.

Author_Institution

Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

2

fYear

1997

fDate

10-13 Nov 1997

Firstpage

209

Abstract

In this paper, we present our experimental results of a mode-locked GaAs-AlGaAs quantum well semiconductor laser. We used a multiple-mode interference (MMI) coupler, instead of a coupler composed of two separate waveguides. Such a MMI coupler is nothing but a multiple-mode waveguide (amplifier) in which the beating of different waveguide modes leads to different transverse wave field distributions at different propagation distances

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; laser mode locking; optical couplers; quantum well lasers; waveguide lasers; GaAs-AlGaAs; mode-locked GaAs-AlGaAs quantum well semiconductor laser; multiple-mode interference coupler; multiple-mode interference waveguide; multiple-mode waveguide; propagation distances; semiconductor laser mode locking; transverse wave field distributions; waveguide mode beating; Erbium-doped fiber lasers; Interference; Laser mode locking; Lasers and electrooptics; Optical coupling; Optical waveguides; Pulse amplifiers; Semiconductor lasers; Semiconductor waveguides; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.645364

Filename

645364