Title :
High-power tunable picosecond lasers at 1.55 μm wavelength
Author :
Yang, Sheng-Hui ; Lee, Chi H. ; Lowry, Curt ; Johnson, Fred ; Stone, Dennis
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
Abstract :
Here we report the results of CW injection-seeding experiments on actively Q-switched two-section strained-layer InGaAsP MQW ridge-waveguide lasers consisting of a gain section and a voltage-controlled absorber section operating near 1.55 μm. High pulse power, a wide tuning range of 33 nm, and near 20 dB side-mode suppression ratios (SMSR) were achieved
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; laser transitions; laser tuning; quantum well lasers; ridge waveguides; waveguide lasers; 1.55 mum; CW injection-seeding experiments; InGaAsP; actively Q-switched; gain section; high pulse power; high-power tunable picosecond lasers; side-mode suppression ratios; two-section strained-layer InGaAsP MQW ridge-waveguide lasers; voltage-controlled absorber section; wide tuning range; Delay lines; Fiber lasers; Laser modes; Laser noise; Laser tuning; Noise generators; Optical pulse generation; Optical pulses; Power lasers; Tunable circuits and devices;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.645373
