Title :
Evolution and status of smart power technology
Author :
Baliga, B.Jayant
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
The progress made in power semiconductor technology that led to the evolution of smart power integrated circuits is reviewed. The displacement of bipolar power transistors by power MOSFETs and insulated-gate bipolar transistors (IGBTs) has been a crucial element that is having a strong impact upon power electronic applications. Trends in technological developments and approaches under investigation to create the next generation of power switching devices are examined. Examples of smart power chips under development around the world highlight the emphasis being given to this area by the semiconductor industry
Keywords :
MOS integrated circuits; power integrated circuits; IGBTs; insulated-gate bipolar transistors; power MOSFETs; power electronics; power switching devices; smart power integrated circuits; Bipolar transistors; Doping; Integrated circuit technology; MOSFETs; Neutrons; Power engineering computing; Silicon carbide; Thyristors; Very large scale integration; Voltage;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 1992. APEC '92. Conference Proceedings 1992., Seventh Annual
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-0485-3
DOI :
10.1109/APEC.1992.228436
