Evolution and status of smart power technology

Author

Baliga, B.Jayant

Author_Institution

Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA

fYear

1992

fDate

23-27 Feb 1992

Firstpage

19

Lastpage

22

Abstract

The progress made in power semiconductor technology that led to the evolution of smart power integrated circuits is reviewed. The displacement of bipolar power transistors by power MOSFETs and insulated-gate bipolar transistors (IGBTs) has been a crucial element that is having a strong impact upon power electronic applications. Trends in technological developments and approaches under investigation to create the next generation of power switching devices are examined. Examples of smart power chips under development around the world highlight the emphasis being given to this area by the semiconductor industry

Keywords

MOS integrated circuits; power integrated circuits; IGBTs; insulated-gate bipolar transistors; power MOSFETs; power electronics; power switching devices; smart power integrated circuits; Bipolar transistors; Doping; Integrated circuit technology; MOSFETs; Neutrons; Power engineering computing; Silicon carbide; Thyristors; Very large scale integration; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition, 1992. APEC '92. Conference Proceedings 1992., Seventh Annual

Conference_Location

Boston, MA

Print_ISBN

0-7803-0485-3

Type

conf

DOI

10.1109/APEC.1992.228436

Filename

228436