A low-power, high-sensitivity injection-locked oscillator for 60 GHz WPAN applications

Author

Li, Xia ; Baltus, Peter ; van Zeijl, Paul ; Milosevic, Dusan ; van Roermund, Arthur

Author_Institution

Mixed-Signal Microelectron., Eindhoven Univ. of Technol., Eindhoven, Netherlands

fYear

2009

fDate

19-21 Jan. 2009

Firstpage

161

Lastpage

164

Abstract

This article presents a 60 GHz low-power injection-locked oscillator in TSMC 65 nm technology. By using the frequency sweeping technique, a simulated 7 GHz total locking range is achieved, which covers the entire 60 GHz ISM band. The simulated settling time is less than 2 ns for each sweeping step with -60 dBm injection power. The DC power consumption is 1 mW of the oscillator core, and 5 mW in total for the input and output buffers, which are mainly used for the matching purpose.

Keywords

injection locked oscillators; low-power electronics; millimetre wave oscillators; personal area networks; ISM band; TSMC technology; WPAN applications; frequency 60 GHz; frequency 7 GHz; frequency sweeping technique; low-power high-sensitivity injection-locked oscillator; power 1 mW; power 5 mW; self-modulating; size 65 nm; Energy consumption; Injection-locked oscillators; Microelectronics; Mixers; Phase locked loops; RF signals; Radio frequency; Silicon; Voltage-controlled oscillators; Wireless personal area networks; 60 GHz; CMOS; Low Power; WPAN; injection locking; self-demodulating;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics & Electronics, 2009. PrimeAsia 2009. Asia Pacific Conference on Postgraduate Research in

Conference_Location

Shanghai

Print_ISBN

978-1-4244-4668-1

Electronic_ISBN

978-1-4244-4669-8

Type

conf

DOI

10.1109/PRIMEASIA.2009.5397421

Filename

5397421