Study to the integrated micro piezoresistive accelerometer for high g application with amplifying circuit

This paper presents the design, fabrication and test of a MEMS accelerometer for high g applications. We adopt crystal silicon as the base for the sensor, which on the one hand can help us to explore the anti-overload ability and piezoresistive characteristics of the silicon, and on the other hand can also help us to achieve our goal of the pure integrated MEMS sensor with circuit on the same silicon wafer base. We present an alternative way to achieve integrity between the sensor cells and the circuit. A two-stage amplifying circuit is designed for the sensor, to achieve 75× amplification of the output signal of the sensor during the test process. In conclusion, the results show that the accelerometer we designed has a sensitivity of 450-600 nV/g in the test range of 50000 g, high anti-overload ability beyond 150000 g, high yield (>90%), in the experimental situation.