Title :
1 GHz 50 mu W 1/2 frequency divider fabricated on ultra-thin SIMOX substrate
Author :
Fujishima, M. ; Yamashita, M. ; Ikeda, M. ; Asada, K. ; Omura, Y. ; Izumi, K. ; Sakai, T. ; Sugano, T.
Author_Institution :
Dept. of Electron. Eng., Tokyo Univ., Japan
Abstract :
Frequency dividers were fabricated on SIMOX substrates with 50-nm SOI layer, 80-nm buried oxide, and gate oxide of 7-nm thickness. Typical drain current and voltage characteristics are given. It is shown that the 1/2 frequency divider can operate at 2.5 GHz, and its power dissipation is 50 mu W at 1 GHz. It is concluded that deep-submicron CMOS circuits on SOI structures are highly promising for low-power-dissipation applications.<>
Keywords :
CMOS integrated circuits; SIMOX; frequency dividers; 1 to 2.5 GHz; 50 muW; 80 to 7 nm; SIMOX substrates; SOI structures; deep-submicron CMOS circuits; drain current; frequency divider; low-power-dissipation applications; power dissipation; ultra-thin SIMOX; Clocks; Energy consumption; Frequency conversion; Inverters; Parasitic capacitance; Power dissipation; Silicon on insulator technology; Substrates; VHF circuits; Voltage;
Conference_Titel :
VLSI Circuits, 1992. Digest of Technical Papers., 1992 Symposium on
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-0701-1
DOI :
10.1109/VLSIC.1992.229243
