A novel method for in situ thermal expansion coefficient measurement of polysilicon thin films [MEMS materials applications]

Author

Zhang, Yuxing ; Huang, Qing-An ; Li, Weihua

Author_Institution

Key Lab. of MEMS of Minist. of Educ., Southeast Univ., Nanjing, China

Volume

3

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

1856

Abstract

This paper presents a novel structure for in situ determination of thermal expansion coefficient (TEC) of polysilicon thin films. Using this structure, all experiments are available in the air without any special requirements for vacuum or sealed chambers. Besides, a paramount novelty for this method is that all readouts are presented in electrical forms, compared with conventional ones obtained by optical observations. In the paper, a thermal-electro-mechanical compliant model is provided and verified with ANSYS software. Moreover, some optimized parameters are achieved through simulations, as well.

Keywords

elemental semiconductors; micromechanical devices; semiconductor thin films; silicon; thermal expansion; thermal variables measurement; MEMS materials; Si; TEC; electrical form readout; in situ thermal expansion coefficient measurement; parameter extraction; polysilicon thin films; thermal-electro-mechanical compliant model; Capacitance measurement; Capacitive sensors; Micromechanical devices; Optical films; Optical sensors; Temperature; Testing; Thermal expansion; Thin film circuits; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1435197

Filename

1435197