A fully integrated VCO in 0.18-µm CMOS technology for a Bluetooth transceiver

Author

Duan, Ji-hai ; Qin, Chao

Author_Institution

Sch. of Inf. & Commun., Guilin Univ. of Electron. Technol., Guilin, China

fYear

2009

fDate

19-21 Jan. 2009

Firstpage

41

Lastpage

44

Abstract

A fully integrated voltage-controlled oscillator (VCO) in SMIC 0.18-μm 1P6M CMOS technology is presented in this paper. The linear tuning range of VCO is from 2.36GHz to 2.52 GHz. The post simulation results show that the phase noise of the proposed VCO is -118.4 dBc/Hz at 1 MHz offset from the carrier at 2.44 GHz, it meets the requirements for Bluetooth application standard, and the current dissipation of the VCO is 3 mA from the 1.8 V power supply.

Keywords

Bluetooth; CMOS integrated circuits; transceivers; voltage-controlled oscillators; Bluetooth transceiver; CMOS technology; SMIC; current 3 mA; frequency 2.36 GHz to 2.52 GHz; frequency 2.44 GHz; integrated VCO; linear tuning range; size 0.18 micron; voltage 1.8 V; voltage-controlled oscillator; Bluetooth; CMOS technology; Circuits; Energy storage; Frequency; Inductors; Phase noise; Q factor; Transceivers; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics & Electronics, 2009. PrimeAsia 2009. Asia Pacific Conference on Postgraduate Research in

Conference_Location

Shanghai

Print_ISBN

978-1-4244-4668-1

Electronic_ISBN

978-1-4244-4669-8

Type

conf

DOI

10.1109/PRIMEASIA.2009.5397451

Filename

5397451