DocumentCode :
3267803
Title :
Residual stresses in semiconductor laser packaging
Author :
Wang, S.C. ; Chang, H.L. ; Wang, C. ; Wang, C.M. ; Liaw, J.W. ; Sheen, M.T. ; Chen, J.H. ; Yang, Y.D. ; Kuang, J.H. ; Hsieh, K.C. ; Cheng, W.H.
Author_Institution :
Chunghwa Telecom Labs., Taoyuan, Taiwan
Volume :
2
fYear :
1997
fDate :
10-13 Nov 1997
Firstpage :
283
Abstract :
The segregation of Au along the crack surface in laser-welded Au-coated Invar for semiconductor laser packaging is investigated experimentally by scanning electron microscope (SEM) mapping, energy dispersive spectrometer (EDS) line profiles, and Auger electron spectroscopy (AES). The results show that the Au accumulates at the crack interface and the concentration of the Au accumulation increases as the bulk Au thickness increases. This indicates that the primary causes of cracks in laser-welded Au-coated materials is the segregation of Au in the final stage of solidification. A finite-element-method (FEM) has been carried out on the analysis of residual stresses in laser packaging. A satisfactory agreement between the experimental results and FEM predictions suggests that the high tensile residual stresses generated by solidification is the possible cause for the cracks
Keywords :
Invar; cracks; finite element analysis; gold; internal stresses; laser beam welding; scanning electron microscopy; semiconductor device packaging; semiconductor device testing; semiconductor lasers; solidification; Au; Auger electron spectroscopy; EDS line profiles; FEM; SEM mapping; bulk Au thickness; crack interface; crack surface; energy dispersive spectrometer; finite-element-method; high tensile residual stresses; laser packaging; laser-welded Au-coated Invar; laser-welded Au-coated materials; residual stresses; scanning electron microscope; semiconductor laser packaging; solidification; Dispersion; Gold; Numerical analysis; Residual stresses; Scanning electron microscopy; Semiconductor device packaging; Semiconductor lasers; Spectroscopy; Surface cracks; Surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
ISSN :
1092-8081
Print_ISBN :
0-7803-3895-2
Type :
conf
DOI :
10.1109/LEOS.1997.645419
Filename :
645419
Link To Document :
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