DocumentCode
3267803
Title
Residual stresses in semiconductor laser packaging
Author
Wang, S.C. ; Chang, H.L. ; Wang, C. ; Wang, C.M. ; Liaw, J.W. ; Sheen, M.T. ; Chen, J.H. ; Yang, Y.D. ; Kuang, J.H. ; Hsieh, K.C. ; Cheng, W.H.
Author_Institution
Chunghwa Telecom Labs., Taoyuan, Taiwan
Volume
2
fYear
1997
fDate
10-13 Nov 1997
Firstpage
283
Abstract
The segregation of Au along the crack surface in laser-welded Au-coated Invar for semiconductor laser packaging is investigated experimentally by scanning electron microscope (SEM) mapping, energy dispersive spectrometer (EDS) line profiles, and Auger electron spectroscopy (AES). The results show that the Au accumulates at the crack interface and the concentration of the Au accumulation increases as the bulk Au thickness increases. This indicates that the primary causes of cracks in laser-welded Au-coated materials is the segregation of Au in the final stage of solidification. A finite-element-method (FEM) has been carried out on the analysis of residual stresses in laser packaging. A satisfactory agreement between the experimental results and FEM predictions suggests that the high tensile residual stresses generated by solidification is the possible cause for the cracks
Keywords
Invar; cracks; finite element analysis; gold; internal stresses; laser beam welding; scanning electron microscopy; semiconductor device packaging; semiconductor device testing; semiconductor lasers; solidification; Au; Auger electron spectroscopy; EDS line profiles; FEM; SEM mapping; bulk Au thickness; crack interface; crack surface; energy dispersive spectrometer; finite-element-method; high tensile residual stresses; laser packaging; laser-welded Au-coated Invar; laser-welded Au-coated materials; residual stresses; scanning electron microscope; semiconductor laser packaging; solidification; Dispersion; Gold; Numerical analysis; Residual stresses; Scanning electron microscopy; Semiconductor device packaging; Semiconductor lasers; Spectroscopy; Surface cracks; Surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location
San Francisco, CA
ISSN
1092-8081
Print_ISBN
0-7803-3895-2
Type
conf
DOI
10.1109/LEOS.1997.645419
Filename
645419
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