Temperature dependent characterization of silicon power semiconductors-a new physical model validated by device internal probing between 400 K and 100 K

Author

Schlög, A.E. ; Mnatsakanov, T.T. ; Kuhn, H. ; Schröder, D.

Author_Institution

Tech. Univ. Munchen, Germany

Volume

2

fYear

1998

fDate

17-22 May 1998

Firstpage

1720

Abstract

A new physical model for characterizing the temperature dependent operation of power semiconductor devices is presented. It is based on the application of a new continuity equation for describing the carrier transport in the low doped layer of power semiconductor structures. Modern results of carrier mobility description, particularly concerning EHS (electron hole scattering) are strictly taken into account even as temperature conditioned effective ionization of doping atoms. The model is validated by FCA (free carrier absorption) experiments at temperatures between 100 K and 400 K

Keywords

carrier mobility; elemental semiconductors; ionisation; power semiconductor devices; semiconductor device models; semiconductor doping; silicon; thermal analysis; 100 to 400 K; Si; carrier mobility description; carrier transport; continuity equation; device internal probing; doping atoms; electron hole scattering; free carrier absorption; low doped layer; physical model; power semiconductor structures; silicon power semiconductors; temperature conditioned effective ionization; temperature dependent characterization; Atomic layer deposition; Charge carrier processes; Electron mobility; Equations; Ionization; Power semiconductor devices; Scattering; Semiconductor device doping; Silicon; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 1998. PESC 98 Record. 29th Annual IEEE

Conference_Location

Fukuoka

ISSN

0275-9306

Print_ISBN

0-7803-4489-8

Type

conf

DOI

10.1109/PESC.1998.703413

Filename

703413