DocumentCode :
3268146
Title :
Enhancement of mode stability in vertical cavity surface emitting lasers with diffused quantum wells structure
Author :
Li, E. Herbert ; Yu, S.F.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
Volume :
2
fYear :
1997
fDate :
10-13 Nov 1997
Firstpage :
295
Abstract :
The use of diffused quantum well structures to enhance single transverse mode operation in vertical cavity surface emitting GaAs-AlGaAs QW semiconductor lasers is proposed and analyzed theoretically
Keywords :
III-V semiconductors; aluminium compounds; diffusion; gallium arsenide; laser cavity resonators; laser modes; laser stability; laser theory; quantum well lasers; semiconductor device models; surface emitting lasers; GaAs-AlGaAs; GaAs-AlGaAs QW semiconductor lasers; diffused quantum wells structure; laser mode stability; laser theory; single transverse mode operation; vertical cavity surface emitting lasers; Laser modes; Laser stability; Optical refraction; Optical surface waves; Optical variables control; Quantum well lasers; Refractive index; Surface emitting lasers; Thermal lensing; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
ISSN :
1092-8081
Print_ISBN :
0-7803-3895-2
Type :
conf
DOI :
10.1109/LEOS.1997.645431
Filename :
645431
Link To Document :
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