DocumentCode
3268146
Title
Enhancement of mode stability in vertical cavity surface emitting lasers with diffused quantum wells structure
Author
Li, E. Herbert ; Yu, S.F.
Author_Institution
Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
Volume
2
fYear
1997
fDate
10-13 Nov 1997
Firstpage
295
Abstract
The use of diffused quantum well structures to enhance single transverse mode operation in vertical cavity surface emitting GaAs-AlGaAs QW semiconductor lasers is proposed and analyzed theoretically
Keywords
III-V semiconductors; aluminium compounds; diffusion; gallium arsenide; laser cavity resonators; laser modes; laser stability; laser theory; quantum well lasers; semiconductor device models; surface emitting lasers; GaAs-AlGaAs; GaAs-AlGaAs QW semiconductor lasers; diffused quantum wells structure; laser mode stability; laser theory; single transverse mode operation; vertical cavity surface emitting lasers; Laser modes; Laser stability; Optical refraction; Optical surface waves; Optical variables control; Quantum well lasers; Refractive index; Surface emitting lasers; Thermal lensing; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location
San Francisco, CA
ISSN
1092-8081
Print_ISBN
0-7803-3895-2
Type
conf
DOI
10.1109/LEOS.1997.645431
Filename
645431
Link To Document