Title :
Improved diphasic nc-Si/a-Si:H I-layer materials using PECVD [p-i-n junction solar cell applications]
Author :
Hao, Huiying ; Zhang, Shibin ; Xu, Yanyue ; Zeng, Xiangbo ; Diao, Hongwei ; Kong, Guanglin ; Liao, Xianbo
Author_Institution :
Inst. of Semicond., Acad. Sinica, Beijing, China
Abstract :
Two series of films has been prepared by using a new regime of plasma enhanced chemical vapor deposition (PECVD) in the region adjacent to the phase transition from amorphous to crystalline state. The photoelectronic properties of the films have been investigated as a function of crystalline fraction. In comparison with typical a-Si:H, these diphasic films with a crystalline fraction less than 0.3, show a similar optical absorption coefficient, higher mobility life-time product (μτ) and higher stability upon light soaking. By using the diphasic nc-Si/a-Si films as the intrinsic layer, a p-i-n junction solar cell has been prepared with an initial efficiency of 9.10% and a stabilized efficiency of 8.56% (AM1.5, -100 mW/cm2).
Keywords :
absorption coefficients; amorphous semiconductors; crystallisation; elemental semiconductors; hydrogen; plasma CVD; semiconductor thin films; silicon; solar cells; 8.56 percent; 9.10 percent; I-layer materials; PECVD; Si:H; amorphous-crystalline state phase transition; crystalline fraction; diphasic films; film photoelectronic properties; light soaking stability; mobility life-time product; optical absorption coefficient; p-i-n junction solar cell; plasma enhanced chemical vapor deposition; solar cell intrinsic layer; solar cell stabilized efficiency; Chemical vapor deposition; Crystalline materials; Crystallization; Optical films; PIN photodiodes; Photovoltaic cells; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma properties;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435239
