A low power, good gain flatness SiGe low noise amplifier for 3.1–10.6GHz ultra wide band radio

Author

Chen, Shih-Chih ; Wang, Ruey-Lue ; Tsai, Cheng-Lung ; Shang, Jui-Hao ; Liu, Chien-Hsuan

Author_Institution

Nat. Yunlin Univ. of Sci. & Technol., Yunlin

fYear

2007

fDate

5-8 Aug. 2007

Firstpage

750

Lastpage

753

Abstract

This paper presents a full band (3.1 GHz to 10.6 GHz) current-reused low noise amplifier (LNA) for ultra wide band (UWB) system based on the TSMC 0.35 m bipolar silicon-germanium (SiGe) processes. The implemented LNA achieves the gain of 14.3 dB, the noise figure (NF) minimum of 2.5 dB and good input and output matching from 3.1 GHz to 10.6 GHz. The power consumption is only 5.4 mW under a 1.5 supply voltage. By adding a feedback resister in the second stage of the adopted current-reused topology, the gain flatness is less than 0.5 dB in every band group. The circuit occupies an area of 1.33 mm².

Keywords

bipolar integrated circuits; feedback amplifiers; low noise amplifiers; low-power electronics; network topology; ultra wideband communication; SiGe; TSMC bipolar process; bandwidth 3.1 GHz to 10.6 GHz; current-reused topology; feedback resister; gain 14.3 dB; low noise amplifier; power 5.4 mW; power consumption; size 0.35 m; ultra wideband radio; ultra wideband system; voltage 1.5 V; Energy consumption; Gain; Germanium silicon alloys; Impedance matching; Low-noise amplifiers; Noise figure; Noise measurement; Silicon germanium; Ultra wideband technology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2007. MWSCAS 2007. 50th Midwest Symposium on

Conference_Location

Montreal, Que.

ISSN

1548-3746

Print_ISBN

978-1-4244-1175-7

Electronic_ISBN

1548-3746

Type

conf

DOI

10.1109/MWSCAS.2007.4488687

Filename

4488687