Title :
A low power, good gain flatness SiGe low noise amplifier for 3.1–10.6GHz ultra wide band radio
Author :
Chen, Shih-Chih ; Wang, Ruey-Lue ; Tsai, Cheng-Lung ; Shang, Jui-Hao ; Liu, Chien-Hsuan
Author_Institution :
Nat. Yunlin Univ. of Sci. & Technol., Yunlin
Abstract :
This paper presents a full band (3.1 GHz to 10.6 GHz) current-reused low noise amplifier (LNA) for ultra wide band (UWB) system based on the TSMC 0.35 m bipolar silicon-germanium (SiGe) processes. The implemented LNA achieves the gain of 14.3 dB, the noise figure (NF) minimum of 2.5 dB and good input and output matching from 3.1 GHz to 10.6 GHz. The power consumption is only 5.4 mW under a 1.5 supply voltage. By adding a feedback resister in the second stage of the adopted current-reused topology, the gain flatness is less than 0.5 dB in every band group. The circuit occupies an area of 1.33 mm2.
Keywords :
bipolar integrated circuits; feedback amplifiers; low noise amplifiers; low-power electronics; network topology; ultra wideband communication; SiGe; TSMC bipolar process; bandwidth 3.1 GHz to 10.6 GHz; current-reused topology; feedback resister; gain 14.3 dB; low noise amplifier; power 5.4 mW; power consumption; size 0.35 m; ultra wideband radio; ultra wideband system; voltage 1.5 V; Energy consumption; Gain; Germanium silicon alloys; Impedance matching; Low-noise amplifiers; Noise figure; Noise measurement; Silicon germanium; Ultra wideband technology; Voltage;
Conference_Titel :
Circuits and Systems, 2007. MWSCAS 2007. 50th Midwest Symposium on
Conference_Location :
Montreal, Que.
Print_ISBN :
978-1-4244-1175-7
Electronic_ISBN :
1548-3746
DOI :
10.1109/MWSCAS.2007.4488687
