Traveling-wave electro-optic modulator with a novel broadband velocity-matching structure

Author

Craig, Douglas L. ; Whitaker, John F. ; Mourou, Gé;rard

Author_Institution

Center for Ultrafast Opt. Sci., Ann Arbor, MI, USA

Volume

2

fYear

1997

fDate

10-13 Nov 1997

Firstpage

314

Abstract

This summary describes a novel GaAs electro-optic modulator that utilizes a resonant free, broadband, and velocity matching in order to achieve a reduced half-wave voltage and improved optical confinements. We have developed a technique to deposit, at room temperature, an amorphous hydrogenated silicon cover on the coplanar electrical waveguide of the electro-optic modulator

Keywords

III-V semiconductors; coplanar waveguides; electro-optical modulation; gallium arsenide; high-speed optical techniques; optical communication equipment; optical planar waveguides; GaAs; GaAs electro-optic modulator; amorphous hydrogenated silicon cover; broadband velocity-matching structure; coplanar electrical waveguide; optical confinements; reduced half-wave voltage; resonant free; room temperature; traveling-wave electro-optic modulator; velocity matching; Amorphous materials; Coplanar waveguides; Electrooptic modulators; Gallium arsenide; Optical modulation; Optical waveguides; Resonance; Silicon; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.645443

Filename

645443