Title :
Ultrafast ion-implanted InGaAs metal-semiconductor-metal photodetectors
Author :
Böttcher, E.H. ; Dröge, E. ; Bimberg, D. ; Kuhl, D. ; Frahm, J. ; Venus, E.B. ; Portnoi, E.L.
Author_Institution :
Inst. fur Festkorperphys. I, Tech. Univ. Berlin, Germany
Abstract :
Metal-semiconductor-metal photodetectors with interdigital electrode patterns are very attractive for applications in ultrafast optoelectronics and electronics such as high-speed switching and signal processing. Here, we shall demonstrate the great potential of ion-implantation for improving the bandwidth of InGaAs MSM photodetectors. The epitaxial layer sequence of the InGaAs MSM photodetector device under study is grown by LP-MOCVD on semi-insulating InP substrates
Keywords :
III-V semiconductors; electro-optical switches; electrodes; gallium arsenide; high-speed optical techniques; indium compounds; ion implantation; metal-semiconductor-metal structures; optical fabrication; photodetectors; vapour phase epitaxial growth; InGaAs; InGaAs MSM photodetector bandwidth; InGaAs MSM photodetector device; InP; LP-MOCVD epitaxial growth; epitaxial layer sequence; high-speed signal processing; high-speed switching; interdigital electrode patterns; ion-implantation; semi-insulating InP substrates; ultrafast ion-implanted InGaAs metal-semiconductor-metal photodetectors; ultrafast optoelectronics; Bandwidth; Electrodes; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; Photoconductivity; Photodetectors; Pulse measurements; Schottky barriers; Wavelength measurement;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.645445
