Title :
A 140 mm/sup 2/ 64 Mb AND flash memory with a 0.4 /spl mu/m technology
Author :
Miwa, H. ; Tanaka, T. ; Oshima, K. ; Nakamura, Y. ; Ishii, T. ; Ohba, A. ; Kouro, Y. ; Furukawa, T. ; Ikeda, Y. ; Tsuchiya, O. ; Hori, R. ; Miyazawa, K.
Author_Institution :
Device Dev. Center, Hitachi Ltd., Tokyo, Japan
Abstract :
This 3.3 V single supply flash memory is for hand-held computers. Low bit cost is a requirement for portable use. AND flash memories have the advantages of small cell size leading to low bit cost and small program/erase size, resulting in fast efficient operation. This 64Mb flash memory is designed for serial-access flash memory cards. Memory array area is reduced by a source line plate layout. Peripheral circuit area is reduced by command/address multiplex for the input circuit, serial address comparison for the redundancy circuit, and an internal low-voltage erase circuit for the X decoder. Using the above methods, a 139.9 mm/sup 2/ chip and 67.4% cell efficiency are realized.
Keywords :
CMOS memory circuits; EPROM; redundancy; 0.4 micron; 3.3 V; 64 Mbit; 67.4 percent; AND flash memory; X decoder; command/address multiplex; hand-held computers; internal low-voltage erase circuit; line plate layout; portable use; redundancy circuit; serial address comparison; serial-access flash memory cards; Circuit noise; Decoding; Flash memory; Fuses; Latches; Low voltage; MOSFETs; Pins; Signal design; Switching circuits;
Conference_Titel :
Solid-State Circuits Conference, 1996. Digest of Technical Papers. 42nd ISSCC., 1996 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3136-2
DOI :
10.1109/ISSCC.1996.488502