Long-wavelength GaInNAs epitaxial growth and its application for 1.3 μm laser diodes

Author

Sato, Shunichi ; Osawa, Yasuhiro ; Saitoh, Tetsuro ; Fujimura, Itaru

Author_Institution

Gen. Electron. Res. & Dev. Center, Ricoh Co. Ltd., Miyagi, Japan

Volume

2

fYear

1997

fDate

10-13 Nov 1997

Firstpage

321

Abstract

In conclusion we have achieved the growth of a GalnNAs lattice matched to GaAs by MOCVD using DMHy as a nitrogen source. Also using a GaInNAs lattice matched to GaAs, we have succeeded in obtaining the room-temperature pulsed operation of GaInNAs-GaAs laser diode at a wavelength of 1.3 μm. The MOCVD method using DMHy as a nitrogen source is promising for the growth of GaInNAs for 1.3 μm range laser diodes

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; laser transitions; optical fabrication; optical transmitters; semiconductor lasers; vapour phase epitaxial growth; 1.3 mum; GaInNAs; GaInNAs-GaAs; GaInNAs-GaAs laser diode; GalnNAs lattice; laser diodes; lattice matching; long-wavelength GaInNAs epitaxial growth; nitrogen source; room-temperature pulsed operation; Atomic measurements; Diode lasers; Epitaxial growth; Gallium arsenide; Lattices; MOCVD; Nitrogen; Optical surface waves; Substrates; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.645446

Filename

645446