Low energy MTCMOS with sleep transistor charge recycling

Author

Liu, Zhiyu ; Kursun, Volkan

Author_Institution

Univ. of Wisconsin - Madison, Madison

fYear

2007

fDate

5-8 Aug. 2007

Firstpage

891

Lastpage

894

Abstract

A new circuit technique is proposed in this paper to lower the energy overhead of mode transitions for effective energy reduction with the MTCMOS circuits. The charge stored at the virtual rails and the sleep signal lines are recycled during the active-to-sleep-to-active mode transitions with the proposed technique. Applying the charge recycling MTCMOS circuit technique to a 32-bit Brent-Kung adder reduces the energy overhead due to the mode transitions by up to 12.2% as compared to the conventional MTCMOS circuits. Furthermore, the standby mode power consumption is reduced by up to 92.8% as compared to a standard Brent-Kung adder in a 65 nm CMOS technology.

Keywords

CMOS logic circuits; adders; charge-coupled devices; energy consumption; low-power electronics; transistors; Brent-Kung adder; active-to-sleep-to-active mode transitions; energy overhead; energy reduction; multithreshold CMOS circuits; size 65 nm; sleep transistor charge recycling; standby mode power consumption; word length 32 bit; CMOS technology; Circuits; Energy consumption; Leakage current; Logic gates; Parasitic capacitance; Rails; Recycling; Sleep; Threshold voltage; Multi-threshold voltage CMOS; energy recycling; sleep switch; subthreshold leakage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2007. MWSCAS 2007. 50th Midwest Symposium on

Conference_Location

Montreal, Que.

ISSN

1548-3746

Print_ISBN

978-1-4244-1175-7

Electronic_ISBN

1548-3746

Type

conf

DOI

10.1109/MWSCAS.2007.4488714

Filename

4488714