DocumentCode :
3268867
Title :
Low energy MTCMOS with sleep transistor charge recycling
Author :
Liu, Zhiyu ; Kursun, Volkan
Author_Institution :
Univ. of Wisconsin - Madison, Madison
fYear :
2007
fDate :
5-8 Aug. 2007
Firstpage :
891
Lastpage :
894
Abstract :
A new circuit technique is proposed in this paper to lower the energy overhead of mode transitions for effective energy reduction with the MTCMOS circuits. The charge stored at the virtual rails and the sleep signal lines are recycled during the active-to-sleep-to-active mode transitions with the proposed technique. Applying the charge recycling MTCMOS circuit technique to a 32-bit Brent-Kung adder reduces the energy overhead due to the mode transitions by up to 12.2% as compared to the conventional MTCMOS circuits. Furthermore, the standby mode power consumption is reduced by up to 92.8% as compared to a standard Brent-Kung adder in a 65 nm CMOS technology.
Keywords :
CMOS logic circuits; adders; charge-coupled devices; energy consumption; low-power electronics; transistors; Brent-Kung adder; active-to-sleep-to-active mode transitions; energy overhead; energy reduction; multithreshold CMOS circuits; size 65 nm; sleep transistor charge recycling; standby mode power consumption; word length 32 bit; CMOS technology; Circuits; Energy consumption; Leakage current; Logic gates; Parasitic capacitance; Rails; Recycling; Sleep; Threshold voltage; Multi-threshold voltage CMOS; energy recycling; sleep switch; subthreshold leakage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2007. MWSCAS 2007. 50th Midwest Symposium on
Conference_Location :
Montreal, Que.
ISSN :
1548-3746
Print_ISBN :
978-1-4244-1175-7
Electronic_ISBN :
1548-3746
Type :
conf
DOI :
10.1109/MWSCAS.2007.4488714
Filename :
4488714
Link To Document :
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