• DocumentCode
    3268889
  • Title

    AC Charge Centroid Model For Quantization Of Inversion Layer In N-MOSFET

  • Author

    King, Ya Chin ; Fujioka, Hiroshi ; Kamohara, Shiroo ; Lee, Wen-Chin ; Hu, Chenming

  • fYear
    1997
  • fDate
    3-5 June 1997
  • Firstpage
    245
  • Lastpage
    249
  • Keywords
    Analytical models; Capacitance; Capacitance-voltage characteristics; Circuit simulation; Integrated circuit modeling; MOSFET circuits; Poisson equations; Quantization; Schrodinger equation; Semiconductor process modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on
  • Conference_Location
    Taipei, Taiwan
  • ISSN
    1524-766X
  • Print_ISBN
    0-7803-4131-7
  • Type

    conf

  • DOI
    10.1109/VTSA.1997.614768
  • Filename
    614768
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3268889