A 1 W 830 MHz monolithic BiCMOS power amplifier

Author

Wong, S.L. ; Bhimnathwala, H. ; Luo, S. ; Halali, B. ; Navid, S.

Author_Institution

Philips Res. Labs., Briarcliff Manor, NY, USA

fYear

1996

fDate

10-10 Feb. 1996

Firstpage

52

Lastpage

53

Abstract

A silicon MMIC power amplifier delivers over 1 W of output power at 830 MHz. When biased in class AB, this amplifier provides a 30 dB power gain, a 30% power-add-efficiency (PAE), and 50 dB dynamic gain-control range. This amplifier uses on-chip spiral inductors to provide interstage impedance matching, and incorporates negative impedance cancellation in one stage to boost gain and impedance level. Temperature-compensated biasing provides accurate control of the quiescent current in each amplifier stage.

Keywords

BiCMOS analogue integrated circuits; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; 1 W; 30 dB; 30 percent; 830 MHz; Si; class AB amplifier; dynamic gain-control; interstage impedance matching; monolithic BiCMOS power amplifier; negative impedance cancellation; on-chip spiral inductors; power gain; power-add-efficiency; quiescent current; silicon MMIC; temperature-compensated biasing; BiCMOS integrated circuits; Dynamic range; Gain; Impedance; Inductors; MMICs; Power amplifiers; Power generation; Silicon; Spirals;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 1996. Digest of Technical Papers. 42nd ISSCC., 1996 IEEE International

Conference_Location

San Francisco, CA, USA

ISSN

0193-6530

Print_ISBN

0-7803-3136-2

Type

conf

DOI

10.1109/ISSCC.1996.488510

Filename

488510