Hot carrier reliability of a SiGe/Si hetero-interface in SiGe/Si-hetero-MOSFETs

Author

Tsuchiya, Toshiaki ; Murota, Junichi

Author_Institution

Interdisciplinary Fac. of Sci. & Eng., Shimane Univ., Matsue, Japan

Volume

3

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

2120

Abstract

The density of hetero-interface-traps in a SiGe/Si heterostructure is successfully measured using a newly established charge pumping technique in a SiGe-channel pMOSFET, without interference from the gate oxide interface traps, and a good correlation between the measured density of hetero-interface-traps and the low frequency noise level in drain current flowing in the SiGe-channel is obtained. Moreover, it is experimentally shown that hot carrier degradation occurs in the SiGe/Si heterostructure, and the density of traps generated is estimated using the new charge pumping technique. These results will enable new levels of improvement to the performance and reliability of strained-Si and SiGe devices.

Keywords

Ge-Si alloys; MOSFET; elemental semiconductors; hot carriers; interface states; semiconductor device measurement; semiconductor device noise; semiconductor device reliability; semiconductor materials; silicon; SiGe-Si; drain current low frequency noise level; gate oxide interface traps; hetero-MOSFET; hetero-interface-trap density; heterostructure hot carrier degradation; hot carrier reliability; low-temperature charge pumping technique; strained pMOSFET; Charge measurement; Charge pumps; Current measurement; Density measurement; Frequency measurement; Germanium silicon alloys; Hot carriers; MOSFET circuits; Noise measurement; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1435262

Filename

1435262