An RF low-noise broadband amplifier processed in 0.35um SiGe technology

Author

Liu, Luncai ; Zhang, Zhengfan

Author_Institution

Nat. Labs of Analog IC, Chongqing, China

Volume

3

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

2144

Abstract

The RF low-noise broadband amplifier in 0.35 μm SiGe technology, which has been successfully processed, was described in this paper. The amplifier has advantages such as wide bandwidth (≥3.2 GHz), low noise figure (NF≤2.0 dB), high power gain (S₂₁≥27 dB), its output power at 1dB gain compression is greater than 9 dBm, and OIP₃ is greater than or equal to 23 dBm. The design concept and the technology features of the broadband amplifier were described. The computer simulated results and the measured parameters of practical products were given, indicating that the process technology conforms well to the design technology.

Keywords

Ge-Si alloys; MMIC amplifiers; bipolar MMIC; feedback amplifiers; semiconductor materials; wideband amplifiers; 0.35 micron; 2.0 dB; 27 dB; 3.2 GHz; HBT circuit; MMIC broadband amplifiers; RF low-noise broadband amplifier; SiGe; feedback amplifier; wide bandwidth amplifier; Bandwidth; Broadband amplifiers; Gain; Germanium silicon alloys; High power amplifiers; Low-noise amplifiers; Noise figure; Radio frequency; Radiofrequency amplifiers; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1435267

Filename

1435267