RF analog and digital circuits in SiGe technology

Author

Long, J.R. ; Copeland, M.A. ; Kovacic, S.J. ; Malhi, D.S. ; Harame, D.L.

Author_Institution

Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada

fYear

1996

fDate

10-10 Feb. 1996

Firstpage

82

Lastpage

83

Abstract

The performance of a commercially viable SiGe-HBT technology is demonstrated in analog and digital communications applications. The measurements show that circuits fabricated in this technology are capable of fulfilling application requirements for RF analog in the 1-5 GHz range and for high-speed digital circuits at or above the 10 Gb/s range, with potentially lower power, lower cost and higher reliability compared to other high-speed/RF technology options.

Keywords

Ge-Si alloys; UHF integrated circuits; bipolar analogue integrated circuits; bipolar digital integrated circuits; heterojunction bipolar transistors; integrated circuit technology; 1 to 5 GHz; 10 Gbit/s; RF analog circuits; SiGe; SiGe-HBT technology; communications applications; high-speed digital circuits; Digital circuits; Energy consumption; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance; Noise figure; Preamplifiers; Radio frequency; Silicon germanium; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 1996. Digest of Technical Papers. 42nd ISSCC., 1996 IEEE International

Conference_Location

San Francisco, CA, USA

ISSN

0193-6530

Print_ISBN

0-7803-3136-2

Type

conf

DOI

10.1109/ISSCC.1996.488523

Filename

488523