Title :
MBE-based materials growth for high fT SiGe HBT
Author :
Jing, Zhang ; Kaicheng, Li ; Kibbel, Horst ; Gruhle, Andreas ; Koenig, U. ; Rongkan, Liu ; Liu Daoguang ; Luncai, Liu ; Rongqiang, Li ; KaiQuan, He ; Wanjing, Xu
Author_Institution :
Nat. Labs of Analog Integrated Circuits, Chongqing, China
Abstract :
In this paper, the technology of MBE-based materials growth for high cutoff frequency (fT) SiGe HBTs was described. To grow a high-performance SiGe/Si hetero-junction multiple-structure, technologies such as the doping of secondary implantation (DSI), low-temperature doping, and antimony (Sb) surface pre-deposition, have been presented in the course of molecular beam epitaxy (MBE). The cutoff frequency of a mesa SiGe HBT, which was developed by using a SiGe/Si hetero-junction multi-structure, reached 105 GHz. In addition, key technologies such as the wafer surface pre-treatment before epitaxial growth, the temperature control of SiGe layer growth, etc., were introduced in detail.
Keywords :
Ge-Si alloys; antimony; elemental semiconductors; heterojunction bipolar transistors; millimetre wave bipolar transistors; molecular beam epitaxial growth; semiconductor doping; semiconductor materials; silicon; surface treatment; 105 GHz; DSI; MBE-based materials growth; Sb; SiGe-Si; epitaxial growth; heterojunction multiple-structures; high cutoff frequency HBT; layer growth temperature control; low-temperature doping; mesa HBT; molecular beam epitaxy; secondary implantation doping; surface pre-deposition; wafer surface pre-treatment; Chemical technology; Circuits; Cleaning; Cutoff frequency; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Lattices; Molecular beam epitaxial growth; Silicon germanium;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435271
