Fabrication of silicon on plasma synthesized SiOxNy by ion-cut process

One of the main disadvantages of conventional silicon-on-insulator (SOI) materials is that the buried oxide layer has poor thermal conductivity and so the self-heating effect becomes a problem. In order to mitigate this effect, the single crystalline Si/SiO_xN_y/Si substrate structures were successfully formed using Si/SiO_xN_y direct wafer bonding and the hydrogen induced layer transfer method. Cross-sectional high-resolution transmission electron microscopy (HRTEM) and spreading resistance (SPR) reveal that the bonded interface is abrupt and the top Si layer exhibits nearly perfect single crystalline quality.