Title :
Frequency dependence of the dielectric properties and coercive field of SrBi2Ta2O9 thin films
Author :
Zhang, Zhigang ; Xie, Dan ; Liu, Zhihong ; Zhu, Jun
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
Frequency dependence of dielectric constant and coercive field were investigated for SrBi2Ta2O9 (SBT) capacitors. In our measured frequency range, the dielectric constant followed an universal-law dependence with various biases, which could be interpreted by constant phase model. The coercive field showed a power-low dependence for the frequency. However, the fitted exponent values did not agree well with the result or Ishibashi and Orihara theory. This suggested that the space charges also play an important role in the domain reverse.
Keywords :
coercive force; ferroelectric capacitors; frequency measurement; permittivity; random-access storage; space charge; thin film capacitors; FeRAM devices; SBT capacitors; SrBi2Ta2O9; coercive field; constant phase model; dielectric constant; ferroelectric random access memories; frequency dependence; power-low dependence; space charges; thin films; universal-law dependence; Capacitors; Dielectric constant; Dielectric measurements; Dielectric thin films; Electrodes; Ferroelectric films; Ferroelectric materials; Frequency dependence; Nonvolatile memory; Random access memory;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435282
