• DocumentCode
    3269441
  • Title

    Frequency dependence of the dielectric properties and coercive field of SrBi2Ta2O9 thin films

  • Author

    Zhang, Zhigang ; Xie, Dan ; Liu, Zhihong ; Zhu, Jun

  • Author_Institution
    Inst. of Microelectron., Tsinghua Univ., Beijing, China
  • Volume
    3
  • fYear
    2004
  • fDate
    18-21 Oct. 2004
  • Firstpage
    2207
  • Abstract
    Frequency dependence of dielectric constant and coercive field were investigated for SrBi2Ta2O9 (SBT) capacitors. In our measured frequency range, the dielectric constant followed an universal-law dependence with various biases, which could be interpreted by constant phase model. The coercive field showed a power-low dependence for the frequency. However, the fitted exponent values did not agree well with the result or Ishibashi and Orihara theory. This suggested that the space charges also play an important role in the domain reverse.
  • Keywords
    coercive force; ferroelectric capacitors; frequency measurement; permittivity; random-access storage; space charge; thin film capacitors; FeRAM devices; SBT capacitors; SrBi2Ta2O9; coercive field; constant phase model; dielectric constant; ferroelectric random access memories; frequency dependence; power-low dependence; space charges; thin films; universal-law dependence; Capacitors; Dielectric constant; Dielectric measurements; Dielectric thin films; Electrodes; Ferroelectric films; Ferroelectric materials; Frequency dependence; Nonvolatile memory; Random access memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
  • Print_ISBN
    0-7803-8511-X
  • Type

    conf

  • DOI
    10.1109/ICSICT.2004.1435282
  • Filename
    1435282