Efficiency and threshold current optimization for 850 nm oxidized VCSELs using a mirror etching technique

Author

Lin, Chao-Kun ; MacDougal, Michael H. ; Bond, Aaron E. ; Dapkus, P.Daniel

Author_Institution

Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA

Volume

2

fYear

1997

fDate

10-13 Nov 1997

Firstpage

348

Abstract

Owing to their commercial application to data links, 850 nm VCSELs have been studied extensively to improve the efficiency and reduce the threshold current. However, there are significant tradeoffs that must be made between these two parameters in a VCSEL design. To optimize the VCSELs performance, the DBR design is optimized based on the calculated reflectivity. In this presentation, we report the experimental optimization VCSEL design for a given active region design using mirror etching technique. The data illustrate the design tradeoffs and result in very high performance devices

Keywords

distributed Bragg reflector lasers; etching; laser mirrors; optical fabrication; surface emitting lasers; 850 nm; DBR design; efficiency; mirror etching; optimization; oxidized VCSEL; reflectivity; threshold current; Apertures; Design optimization; Distributed Bragg reflectors; Etching; Gallium arsenide; Mirrors; Oxidation; Reflectivity; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.645461

Filename

645461