DocumentCode :
3269491
Title :
Hole mobilities in the Si/SiGe grown on nanometer SOI of SIMOX [MOSFET example]
Author :
Fujinaga, Kiyohisa
Author_Institution :
Hokkaido Inst. of Technol., Sapporo, Japan
Volume :
3
fYear :
2004
fDate :
18-21 Oct. 2004
Firstpage :
2218
Abstract :
A SIMOX wafer has defects generated at the interface between the SOI and buried oxide. The nanometer-SOI device performance is supposed to be influenced by the crystalline quality of the SOI surface layer. In this report, Si/SiGe/Si layers on the SOI with a thickness of 7-283 nm were grown and P-type MOSFETs were fabricated on the layers. A crystalline quality evaluation was carried out for the surface layers through the I-V characteristics. The drain current decreased as the SOI thickness decreased. The effective hole mobility for the device with the thinnest 7-nm SOI was nearly 15% lower than that for the other devices. It was concluded that the 7-nm-thick SOI case could not sufficiently reduce the defect density in the SOI surface region and the 21-nm and 283-nm-thick SOI cases could promote the crystalline quality of the surface layers grown on the SOI.
Keywords :
Ge-Si alloys; MOSFET; SIMOX; crystal defects; elemental semiconductors; hole mobility; nanoelectronics; semiconductor materials; silicon; silicon-on-insulator; 21 nm; 7 to 283 nm; I-V characteristics; P-type MOSFET; SIMOX wafer defects; SOI surface layer crystalline quality; SOI-buried oxide interface defects; Si-SiGe-SiO2; defect density; effective hole mobility; nanometer SOI; thickness dependent drain current; Buffer layers; Crystallization; Germanium silicon alloys; Inductors; Infrared heating; MOSFETs; Nanoscale devices; Pollution measurement; Silicon germanium; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
Type :
conf
DOI :
10.1109/ICSICT.2004.1435285
Filename :
1435285
Link To Document :
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