Title :
Implementation of CMRC on HBT power amplifier for WCDMA application
Author :
Pock, C.K. ; Yan, B.P. ; Yang, E.S.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., China
Abstract :
An InGaP/GaAs heterojunction bipolar transistor (HBT) is developed. By using this HBT, a power amplifier is designed for WCDMA user equipment, band-1 power class-2 application. The HBT power amplifier demonstrates a maximum output power (Pout) of 29.4 dBm and a PAE of 48% at the frequency of 1.95 GHz. When it operates in the WCDMA standard, it achieves a Pout of 27 dBm and a PAE of 32.4%. The adjacent channel leakage power ratio (ACLR) is -33 dBc. To improve the PAE, ACLR and IM3 performance further, a CMRC (compact microstrip resonance cell) circuit has been implemented on the HBT amplifier. The effect of CMRC on PAE and ACLR is investigated using a low power HBT amplifier. The results show that the ACLR can be improved by the CMRC.
Keywords :
UHF bipolar transistors; UHF power amplifiers; bipolar transistor circuits; code division multiple access; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; linearisation techniques; microstrip resonators; mobile radio; nonlinear network synthesis; 1.95 GHz; HBT power amplifier; InGaP-GaAs; WCDMA application; WCDMA user equipment; adjacent channel leakage power ratio; amplifier linearizer; compact microstrip resonance cell; heterojunction bipolar transistor; indium gallium phosphide/gallium arsenide HBT; mobile devices; Bipolar transistors; Circuits; Gallium arsenide; Heterojunction bipolar transistors; Linearity; Multiaccess communication; Power amplifiers; Power generation; Power harmonic filters; Resonance;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435290
