Title :
GaAs monolithic 1.5-2.5 GHz image rejection receiver
Author :
Bóveda, Angel ; Bonato, G. Luca ; Ripollés, Olga
Author_Institution :
Telettra Espana SA, Madrid, Spain
Abstract :
The design and performance of a microwave receiver design using GaAs monolithic technology are described. The receiver has been designed for use in digital radio links at 1.5-2.5 GHz. Its main features are its low noise figure and image frequency rejection. The receiver consists of two GaAs chips; a low-noise amplifier (LNA) and an image rejection mixer. The LNA achieves 19-dB gain with an associated noise figure of 1.7 dB. The image rejection mixer allows 20 dB of image suppression. The whole receiver exhibited a total gain greater than 31 dB and an associated noise figure lower than 2.5 dB over a 1-GHz bandwidth
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; digital radio systems; field effect integrated circuits; gallium arsenide; microwave amplifiers; mixers (circuits); radio receivers; 1 GHz; 1.5 to 2.5 GHz; 1.7 dB; 19 dB; 2.5 dB; 31 dB; GaAs; LNA; UHF; bandwidth; digital radio links; features; image frequency rejection; image rejection mixer; image rejection receiver; image suppression; low-noise amplifier; microwave receiver; noise figure; semiconductors; two chip set; Frequency; Gallium arsenide; Impedance; Integrated circuit noise; Low-noise amplifiers; MESFETs; Microwave technology; Noise figure; Radiofrequency amplifiers; Receivers;
Conference_Titel :
Circuits and Systems, 1992. ISCAS '92. Proceedings., 1992 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0593-0
DOI :
10.1109/ISCAS.1992.229971
