Title :
The temperature characteristics of AlGaN/GaN double heterostructure HEMTs
Author :
Lu, Changzhi ; Feng, Shiwei ; Wang, Dongfeng ; Zhu, Xiudian ; Fan, Zhifang ; Morkoc, Hadis
Author_Institution :
Sch. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., China
Abstract :
AlGaN/GaN double heterostructure high electron mobility transistors (DH-HEMT´s) with a 2.0 μm gate length and a 4 μm channel length, exhibiting good temperature characteristics, have been demonstrated. The maximum drain current Ids and extrinsic transconductance Gm are 1300 mA/mm 235 mS/mm, 85.0 mA/mm 174 mS/mm, and 475 mA/mm, 95 mS/mm, respectively at T = -194°C, 20°C and 400°C. The temperature coefficient of Ids and Gm are -1.4 mA/°C and 0.24 mS/°C respectively.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device measurement; thermal stability; wide band gap semiconductors; -194 degC; 2.0 micron; 20 degC; 4 micron; 400 degC; AlGaN-GaN; DH-HEMT; HEMT temperature characteristics; channel length; double heterostructure HEMT; extrinsic transconductance; gate length; high electron mobility transistors; maximum drain current; temperature coefficient; Aluminum gallium nitride; Current measurement; DH-HEMTs; Electrons; Etching; Gallium nitride; Gold; HEMTs; Substrates; Temperature distribution;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435301
