DocumentCode :
3270029
Title :
Progress in ArF immersion lithography
Author :
Ronse, Kurt ; Ercken, Monique ; Leunissen, Peter ; Maenhoudt, Mireille ; Cheng, Shaunee ; Vandenberghe, Geert
Author_Institution :
IMEC, Leuven, Belgium
fYear :
2005
fDate :
25-28 Oct. 2005
Firstpage :
52
Abstract :
193nm immersion lithography has recently gained a lot of momentum, and is currently anticipated to be the prime lithography solution for the 65nm and 45nm half pitch technology nodes. In this paper, the latest achievements obtained in the IMEC immersion program are reviewed. Also the remaining concerns are addressed. Items touched upon are: lithographic performance of the full field scanner, defectivity including bubbles, resist and top coat progress and polarization effects.
Keywords :
argon compounds; bubbles; immersion lithography; nanolithography; polarisation; resists; ultraviolet lithography; 193 nm; ArF; ArF immersion lithography; full field scanner; polarization effects; resist material; top coat progress; Focusing; Interference; Lenses; Lithography; Manufacturing industries; Manufacturing processes; Polarization; Resists;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2005 International
Print_ISBN :
4-9902472-2-1
Type :
conf
DOI :
10.1109/IMNC.2005.203733
Filename :
1595209
Link To Document :
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