DocumentCode
3270029
Title
Progress in ArF immersion lithography
Author
Ronse, Kurt ; Ercken, Monique ; Leunissen, Peter ; Maenhoudt, Mireille ; Cheng, Shaunee ; Vandenberghe, Geert
Author_Institution
IMEC, Leuven, Belgium
fYear
2005
fDate
25-28 Oct. 2005
Firstpage
52
Abstract
193nm immersion lithography has recently gained a lot of momentum, and is currently anticipated to be the prime lithography solution for the 65nm and 45nm half pitch technology nodes. In this paper, the latest achievements obtained in the IMEC immersion program are reviewed. Also the remaining concerns are addressed. Items touched upon are: lithographic performance of the full field scanner, defectivity including bubbles, resist and top coat progress and polarization effects.
Keywords
argon compounds; bubbles; immersion lithography; nanolithography; polarisation; resists; ultraviolet lithography; 193 nm; ArF; ArF immersion lithography; full field scanner; polarization effects; resist material; top coat progress; Focusing; Interference; Lenses; Lithography; Manufacturing industries; Manufacturing processes; Polarization; Resists;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2005 International
Print_ISBN
4-9902472-2-1
Type
conf
DOI
10.1109/IMNC.2005.203733
Filename
1595209
Link To Document