Investigation of InGaP/GaAs double heterostructure-emitter bipolar transistor with multiple negative-differential-resistance switches

Author

Tsai, Jung-Hui ; Chu, Yu-Jui ; Chen, Jeng-Shyan ; Zhu, King-Poul

Author_Institution

Dept. of Phys., Nat. Kaohsiung Normal Univ., Taiwan

Volume

3

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

2305

Abstract

A functional InGaP/GaAs double heterostructure-emitter bipolar transistor is fabricated and demonstrated. Due to the large valence band discontinuity to conduction band discontinuity ratio at the InGaP/GaAs heterojunction and the symmetrical structure, excellent transistor performance, with a high current gain of 195 and a low collector-emitter (C-E) offset voltage of 60 mV, is achieved. In particular, attributed to the avalanche multiplication and confinement effect for electrons at the InGaP/GaAs heterojunction, interesting multiple S-shaped negative-differential-resistance switches are observed under large C-E forward voltage.

Keywords

avalanche breakdown; conduction bands; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; negative resistance; semiconductor heterojunctions; semiconductor technology; valence bands; 60 mV; InGaP-GaAs; avalanche multiplication; collector-emitter offset voltage; conduction band discontinuity; confinement effect; current gain; double heterostructure-emitter bipolar transistor; indium phosphide/gallium arsenide heterojunction; multiple negative-differential-resistance switches; symmetrical structure; valence band discontinuity; Bipolar transistors; Electrons; Etching; Gallium arsenide; Heterojunctions; Physics; Power semiconductor switches; Substrates; Switching circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1435306

Filename

1435306