Title :
Decrease in interface states density of 4H-SiC MOS under high electric field stress
Author :
Zhao, P. ; Rusli ; Tin, C.C. ; Yoon, S.F. ; Zhu, W.G. ; Ahn, J. ; Ligatchev, V.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
An Al/SiO2/4H-SiC metal-insulator-semiconductor (MOS) structure has been characterized using high frequency C-V measurements. By subjecting the MOS to high electric field stress (6 MV/cm), the flat-band voltage and effective oxide charge have been found to increase with stress time. In contrast, there is a decrease in the interface states density upon the electric field stress. The results can be explained by electron trapping in the complicated intermediary interfacial layer between SiO2 and 4H-SiC.
Keywords :
MIS devices; MOS capacitors; aluminium; electron traps; high field effects; interface states; silicon compounds; wide band gap semiconductors; 4H-SiC MOS; Al-SiO2-SiC; MOS capacitor; MOS devices; effective oxide charge; electron trapping; flat-band voltage; high electric field stress; high frequency C-V measurement; interface states density; intermediary interfacial layer; stress time; Capacitance; Capacitance-voltage characteristics; Frequency; Hafnium; Interface states; MOS capacitors; Oxidation; Silicon carbide; Stress; Voltage;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435308
