DocumentCode
3270111
Title
Optimization of device structure of SiCOI MESFET with dielectric groove isolation
Author
Xin, Gong ; JinCheng, Zhang ; Yue, Hao
Author_Institution
Inst. of Microelectron., Xidian Univ., China
Volume
3
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
2317
Abstract
The optimization of groove width and groove depth of a SiCOI MESFET with dielectric groove isolation is studied. Simulation results show that when the groove width is 2 μm and groove depth is 0.15 μm, the breakdown voltage is greatly increased and a large decrease of the drain characteristics does not occur, and the device gains the largest output power which is equal to 13 W/mm.
Keywords
Schottky gate field effect transistors; isolation technology; optimisation; semiconductor device breakdown; semiconductor device models; silicon compounds; wide band gap semiconductors; 0.15 micron; 2 micron; SiC-Al2O3; SiCOI MESFET; breakdown voltage increase; device structure optimization; dielectric groove isolation; groove depth; groove width; Dielectric devices; Dielectric materials; Electric breakdown; Impurities; Ionization; MESFETs; Medical simulation; Power generation; Semiconductor process modeling; Silicon carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1435309
Filename
1435309
Link To Document