DocumentCode :
3270126
Title :
Terahertz photomixing in low-temperature-grown GaAs
Author :
Brown, E.R. ; Verghese, S. ; McIntosh, K.A.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA
Volume :
2
fYear :
1997
fDate :
10-13 Nov 1997
Abstract :
This presentation will begin by contrasting the LTG-GaAs photomixer against other solid-state generation techniques being pursued in the far-infrared region, including three-wave mixing and electronic frequency multiplication. The second part of the presentation will review recent experiments aimed at overcoming the efficiency limits and in achieving power levels above 1 μW. The final part of the presentation will focus on the implementation of the photomixer in scientific instruments for astronomy, chemistry, and metrology
Keywords :
III-V semiconductors; gallium arsenide; optical frequency conversion; submillimetre wave mixers; 1 muW; GaAs; LTG-GaAs photomixer; low-temperature-grown GaAs; solid-state far-infrared generation; terahertz photomixing; Electrodes; Frequency; Gallium arsenide; Laboratories; Local oscillators; Photoconductivity; Power generation; Solid state circuits; Space technology; Tunable circuits and devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
ISSN :
1092-8081
Print_ISBN :
0-7803-3895-2
Type :
conf
DOI :
10.1109/LEOS.1997.645468
Filename :
645468
Link To Document :
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