Title :
High average power THz-radiation from femtosecond optical-pulse irradiated semiconductors under the magnetic field
Author :
Ohtake, Hideyuki ; Izumida, Shinji ; Liu, Zhenlin ; Yamanaka, Takaya ; Sarukura, Nobuhiko
Author_Institution :
Inst. for Molecular Sci., Okazaki, Japan
Abstract :
In this paper, THz-radiation power from semiconductors irradiated with a femtosecond-optical pulse is significantly enhanced and reaches up to 110 μW under 1.7 T magnetic field; we also found a dramatic change of ellipticity. A mode-locked Ti:sapphire laser delivered 100-fsec pulses at 760 nm for the excitation
Keywords :
high-speed optical techniques; laser beam effects; magneto-optical effects; semiconductor materials; solid lasers; 1.7 T; 100 fs; 110 muW; 760 nm; THz-radiation power; ellipticity; femtosecond optical-pulse irradiated semiconductors; femtosecond-optical pulse; fsec pulses; high average power THz-radiation; magnetic field; mode-locked Ti:sapphire laser; Absorption; Gallium arsenide; Magnetic fields; Optimized production technology; Physics; Polarization; Solids; Ultrafast electronics;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.645469
