Formation of nanostructures by selective-area MOVPE and their applications

Semiconductor nanostructures have been attracting particular attention as fundamental building blocks for nanoscale electronics and photonics in the bottom-up approach. One of the key issues is to realize high-quality and high-density nanostructures with accurate size- and site-controllability. Selective-area (SA) growth on masked substrates using metal organic vapor phase epitaxy (MOVPE) is one of the most effective and versatile techniques to realize nanostructures satisfying these requirements, because the nature of the epitaxial growth is fully utilized and a variety of structures can be realized by appropriate choice of the substrate orientation and design of the mask pattern. Here we present some of our recent results on the formation of nanostructures by SA-MOVPE and their application to nanoscale devices and circuits.