Title :
Low pressure MOCVD growth of GaAlN and related compound for UV emission
Author :
Kawanishi, H. ; Kurimoto, M. ; Yamamoto, J. ; Shibata, M. ; Honda, T.
Author_Institution :
Dept. of Electron. Eng., Kohgakuin Univ., Tokyo, Japan
Abstract :
Continuous wave operation at 400 nm was reported in GaInN-AlGaN MQW structure laser diode. The shortest wavelength of the GaInN quantum well structure laser diode was 367.5 nm at room temperature under pulsed operation. However GaN, AlN and related semiconductors are expected as a wide-band gap semiconductor for UV emitting devices. In this paper, it is discussed that possible application of GaAlN ternary and (BAlGa)N quaternary to UV light emitting devices and the quality of epitaxial layer grown by low pressure metal-organic chemical vapor deposition (LP-MOCVD)
Keywords :
III-V semiconductors; gallium compounds; indium compounds; laser transitions; photoluminescence; quantum well lasers; vapour phase epitaxial growth; (BAlGa)N quaternary; 367.5 nm; 400 nm; BAlGaN; GaAlN; GaAlN ternary; GaInN quantum well structure laser diode; GaInN-AlGaN; GaInN-AlGaN MQW structure laser diode; UV emission; UV emitting devices; UV light emitting devices; continuous wave operation; epitaxial layer; low pressure MOCVD growth; low pressure metal-organic chemical vapor deposition; pulsed operation; wide-band gap semiconductor; Capacitive sensors; Diode lasers; Epitaxial growth; Gallium nitride; Lattices; MOCVD; Photonic band gap; Silicon carbide; Substrates; Temperature;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.645473
