Title :
Influence of InP cap layer on photo-responsivity of InP/InGaAs PIN detector
Author :
Shiwei Feng ; Changzhi Lu
Author_Institution :
Sch. of Electron. Inf. & Auto Control, Beijing Univ. of Technol., China
Abstract :
The InP cap layer plays a significant role towards improving the performance of the InP/InGaAs p-i-n photodiode. However, the measurements and simulation confirm that it also induces wavelength-dependent absorption losses and a non-flat photoresponsivity curve due to the reflections from the multi-layer structure.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; light absorption; optical multilayers; p-i-n photodiodes; semiconductor device measurement; semiconductor device models; InP-InGaAs; PIN detector cap layer; front-illuminated photodiode; multilayer structure reflections; nonflat photoresponsivity curve; p-i-n photodiode; photoresponsivity fringe-pattern; wavelength-dependent absorption losses; Absorption; Dark current; Detectors; Indium gallium arsenide; Indium phosphide; Optical fiber communication; Optical reflection; PIN photodiodes; Substrates; Wavelength measurement;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435313
