Title :
Study on intra-cavity contacted oxide-confined vertical cavity surface emitting laser
Author :
Xia, Guo ; HongWei, Qu ; Da Xiaoli ; Limin, Dong ; Jun, Deng ; Peng, Lian ; Zuntu, Xu ; GuangDi, Shen
Author_Institution :
Sch. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., China
Abstract :
An intra-cavity contacted oxide-confined InGaAs/GaAs VCSEL had been fabricated by low-pressure metal organic chemical-vapor deposition (LP-MOCVD) and a three axes self-aligning process technique. The optical standing wave field of the VCSEL was simulated. In addition, the temperature performance of the VCSEL has also been investigated by using the SV-32 cryostat and LD2002C5 test system. A CW light output power of 8 mW was obtained at 35 mA. The small change of threshold current across a broad range of temperature from 243-333.1 K suggests an excellent temperature performance.
Keywords :
MOCVD; surface emitting lasers; 243 to 333.1 K; 35 mA; 8 mW; InGaAs-GaAs; LP-MOCVD; intra-cavity contacted VCSEL; low-pressure metal organic chemical-vapor deposition; optical standing wave field; oxide-confined VCSEL; temperature-induce threshold current change; three axes self-aligning process; vertical cavity surface emitting laser; Chemical lasers; Chemical processes; Gallium arsenide; Indium gallium arsenide; Optical surface waves; Organic chemicals; Stimulated emission; Surface emitting lasers; Temperature distribution; Vertical cavity surface emitting lasers;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435315
