Production of III-nitride films for LED and laser applications by multiwafer MOVPE

Author

Beccard, R. ; Wachtendorf, B. ; Schön, O. ; Schmitz, D. ; Jurgensen, H. ; Woelk, E.

Author_Institution

AIXTRON GmbH, Aachen, Gemany

Volume

2

fYear

1997

fDate

10-13 Nov 1997

Firstpage

376

Abstract

Although many research institutions presently are using single wafer reactors for the growth of III-V nitrides, there is already a strong request for mass production MOCVD systems. With the planetary reactors a reactor type exists which already meets all requirements of blue LED and laser mass production. We present results on the growth of GaInAlN films in multiwafer planetary reactors with 7×2" wafer capacity

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; optical fabrication; optical films; semiconductor growth; semiconductor lasers; semiconductor thin films; vapour phase epitaxial growth; 2 in; 7 in; GaInAlN; III-V nitrides; III-nitride films; LED; blue LED; laser applications; mass production MOCVD systems; multiwafer MOVPE; planetary reactors; research institutions; semiconductor laser mass production; semiconductor technology; single wafer reactors; Epitaxial growth; Epitaxial layers; Gallium nitride; Inductors; Laser applications; Light emitting diodes; MOCVD; Mass production; Temperature distribution; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.645475

Filename

645475