Title :
Simulation study of 1.2 kV 4H-SiC DIMOSFET structures
Author :
Chen, L. ; Guy, O.J. ; Jennings, M.R. ; Wilks, S.P. ; Mawby, P.A.
Author_Institution :
Sch. of Eng., Univ. of Wales, Swansea, UK
Abstract :
Numerical device simulations on a 4H-SiC 1.2 kV vertical MOSFET are presented. The TMA MEDICI device simulator was employed to carry out a characterization study of double implanted MOSFET (DIMOSFET) structures. Appropriate material parameters were adjusted for the 4H-SiC polytype used in this study. The simulations mainly focus on the reverse blocking voltage, threshold voltage, forward characteristics, and on state resistance evaluations. Optimized parameters are given for the specific designed structure.
Keywords :
optimisation; power MOSFET; semiconductor device models; silicon compounds; wide band gap semiconductors; 1.2 kV; 4H-SiC DIMOSFET; SiC; device optimized design parameters; double implanted MOSFET structures; drift region doping concentration; forward characteristics; on state resistance; reverse blocking voltage; threshold voltage; Breakdown voltage; Conductivity; Doping; Immune system; Ion implantation; MOSFET circuits; Medical simulation; Photonic band gap; Silicon carbide; Threshold voltage;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435316
