Title :
Defect engineering in silicon used for ultra large-scale integrated circuits
Author :
Yang, Deren ; Yu, Xuegong ; Ma, Xiangyang ; Que, Duanlin
Author_Institution :
State Key Lab of Silicon Mater., Zhejiang Univ., Hangzhou, China
Abstract :
The internal gettering (IG) technology in Czochralski (CZ) silicon doped with different impurities (nitrogen, germanium and high concentration boron) have been investigated in the paper. It was found that the denuded zone (DZ) could be formed at the near-surface of the CZ silicon doped with these impurities by hi-lo-hi three-step annealing, even high temperature single-step annealing. Meanwhile, dense bulk microdefects (BMD) generated in the bulk of these wafers enabled strong capability of gettering detrimental metal impurities on the silicon wafer. In addition, the formation mechanism of the DZ and the BMD region in the CZ silicon doped with these impurities has been discussed.
Keywords :
ULSI; annealing; boron; crystal growth from melt; germanium; getters; nitrogen; silicon; BMD; CZ silicon; Czochralski silicon; Si:B; Si:Ge; Si:N; defect engineering; dense bulk microdefects; denuded zone; formation mechanism; germanium dopant; hi-lo-hi three-step annealing; high concentration boron dopant; high temperature single-step annealing; internal gettering technology; metal impurities; near surface; nitrogen dopant; ultra large-scale integrated circuits; Annealing; Boron; Germanium; Gettering; Impurities; Integrated circuit technology; Nitrogen; Paper technology; Silicon; Ultra large scale integration;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435320
