Defect engineering in silicon used for ultra large-scale integrated circuits

Author

Yang, Deren ; Yu, Xuegong ; Ma, Xiangyang ; Que, Duanlin

Author_Institution

State Key Lab of Silicon Mater., Zhejiang Univ., Hangzhou, China

Volume

3

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

2356

Abstract

The internal gettering (IG) technology in Czochralski (CZ) silicon doped with different impurities (nitrogen, germanium and high concentration boron) have been investigated in the paper. It was found that the denuded zone (DZ) could be formed at the near-surface of the CZ silicon doped with these impurities by hi-lo-hi three-step annealing, even high temperature single-step annealing. Meanwhile, dense bulk microdefects (BMD) generated in the bulk of these wafers enabled strong capability of gettering detrimental metal impurities on the silicon wafer. In addition, the formation mechanism of the DZ and the BMD region in the CZ silicon doped with these impurities has been discussed.

Keywords

ULSI; annealing; boron; crystal growth from melt; germanium; getters; nitrogen; silicon; BMD; CZ silicon; Czochralski silicon; Si:B; Si:Ge; Si:N; defect engineering; dense bulk microdefects; denuded zone; formation mechanism; germanium dopant; hi-lo-hi three-step annealing; high concentration boron dopant; high temperature single-step annealing; internal gettering technology; metal impurities; near surface; nitrogen dopant; ultra large-scale integrated circuits; Annealing; Boron; Germanium; Gettering; Impurities; Integrated circuit technology; Nitrogen; Paper technology; Silicon; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1435320

Filename

1435320