Measurement of internal quantum efficiency and surface recombination velocity in InGaN structures

Author

Jackson, M. ; Boroditsky, M. ; Yablonovitch, E. ; Keller, S. ; Keller, B. ; DenBaars, S.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

2

fYear

1997

fDate

10-13 Nov 1997

Firstpage

378

Abstract

We report the first measurements of the spectrally resolved absolute internal luminescence quantum efficiency and surface recombination velocity of an InGaN-GaN multiquantum well (MQW) structures. The absolute external quantum efficiency is measured by referencing the measured photoluminescence (PL) from the sample with the reading measured from the laser off of the perfect 100% white lambertian reflector

Keywords

III-V semiconductors; calibration; gallium compounds; indium compounds; optical testing; photoluminescence; semiconductor quantum wells; surface recombination; InGaN structures; InGaN-GaN; InGaN-GaN MQW structure; InGaN-GaN multiquantum well structures; absolute external quantum efficiency; internal quantum efficiency; measured photoluminescence; perfect 100% white lambertian reflector; spectrally resolved absolute internal luminescence quantum efficiency; surface recombination velocity; Etching; Gallium nitride; Optical materials; Optical pumping; Optical surface waves; Quantum well devices; Radiative recombination; Surface emitting lasers; Velocity measurement; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.645476

Filename

645476