Title :
Measurement of internal quantum efficiency and surface recombination velocity in InGaN structures
Author :
Jackson, M. ; Boroditsky, M. ; Yablonovitch, E. ; Keller, S. ; Keller, B. ; DenBaars, S.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Abstract :
We report the first measurements of the spectrally resolved absolute internal luminescence quantum efficiency and surface recombination velocity of an InGaN-GaN multiquantum well (MQW) structures. The absolute external quantum efficiency is measured by referencing the measured photoluminescence (PL) from the sample with the reading measured from the laser off of the perfect 100% white lambertian reflector
Keywords :
III-V semiconductors; calibration; gallium compounds; indium compounds; optical testing; photoluminescence; semiconductor quantum wells; surface recombination; InGaN structures; InGaN-GaN; InGaN-GaN MQW structure; InGaN-GaN multiquantum well structures; absolute external quantum efficiency; internal quantum efficiency; measured photoluminescence; perfect 100% white lambertian reflector; spectrally resolved absolute internal luminescence quantum efficiency; surface recombination velocity; Etching; Gallium nitride; Optical materials; Optical pumping; Optical surface waves; Quantum well devices; Radiative recombination; Surface emitting lasers; Velocity measurement; Wavelength measurement;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.645476
